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IRF7524D1
MOSFET Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units Conditions
?
––– R G = 6.0 ?
V (BR)DSS
R DS(on)
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
C iss
C oss
C rss
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-20
–––
–––
-0.70
1.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.17
0.28
–––
–––
–––
–––
–––
–––
5.4
0.96
2.4
9.1
35
38
43
240
130
64
––– V V GS = 0V, I D = -250μA
0.27 V GS = -4.5V, I D = -1.2A ?
0.40 V GS = -2.7V, I D = -0.60A ?
––– V V DS = V GS , I D = -250μA
––– S V DS = -10V, I D = -0.60A
-1.0 V DS = -16V, V GS = 0V
μA
-25 V DS = -16V, V GS = 0V, T J = 125°C
-100 V GS = -12V
nA
100 V GS = 12V
8.2 I D = -1.2A
1.4 nC V DS = -16V
3.6 V GS = -4.5V, See Fig. 6 ?
––– V DD = -10V
––– I D = -1.2A
ns
––– R D = 8.3 ? , ?
––– V GS = 0V
––– pF V DS = -15V
––– ? = 1.0MHz, See Fig. 5
MOSFET Source-Drain Ratings and Characteristics
Parameter
Min.
Typ.
Max. Units
Conditions
I S
I SM
Continuous Source Current(Body Diode)
Pulsed Source Current (Body Diode)
–––
–––
–––
–––
-1.25
-9.6
A
V SD
t rr
Q rr
Body Diode Forward Voltage
Reverse Recovery Time (Body Diode)
Reverse Recovery Charge
–––
–––
–––
–––
52
63
-1.2 V T J = 25°C, I S = -1.2A, V GS = 0V
78 ns T J = 25°C, I F = -1.2A
95 nC di/dt = 100A/μs ?
Schottky Diode Maximum Ratings
Parameter
Max. Units
Conditions
I F(av)
I SM
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
1.9
1.4
120
11
A
A
50% Duty Cycle. Rectangular Wave, T A = 25°C
See Fig.14 T A = 70°C
5μs sine or 3μs Rect. pulse Following any rated
10ms sine or 6ms Rect. pulse load condition &
with V RRM applied
Schottky Diode Electrical Specifications
Parameter
Max. Units
Conditions
V FM
Max. Forward voltage drop
0.50
0.62
0.39
0.57
V
I F = 1.0A, T J = 25°C
I F = 2.0A, T J = 25°C
I F = 1.0A, T J = 125°C
I F = 2.0A, T J = 125°C .
I RM
Max. Reverse Leakage current
0.02
8
mA
V R = 20V T J = 25°C
T J = 125°C
C t
dv/dt
Max. Junction Capacitance
Max. Voltage Rate of Charge
92 pF
3600 V/ μs
V R = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated V R
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
2
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